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| FDMA1027P Dual P-Channel PowerTrench(R) MOSFET FDMA1027P Dual P-Channel PowerTrench(R) MOSFET General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. The MicroFET 2x2 package offers exceptional thermal performance for it's physical size and is well suited to linear mode applications. September 2008 Features -3.0 A, -20V. RDS(ON) = 120 m @ VGS = -4.5 V RDS(ON) = 160 m @ VGS = -2.5 V RDS(ON) = 240 m @ VGS = -1.8 V Low Profile - 0.8 mm maximun - in the new package MicroFET 2x2 mm RoHS Compliant PIN1 S1 G1 D2 S1 D1 D2 G1 D2 1 2 3 6 5 4 D1 G2 S2 MicroFET 2X2 Symbol VDSS VGSS ID PD TJ, TSTG D1 G2 S2 Ratings -20 8 (Note 1a) (Note 1a) (Note 1b) -3.0 -6 1.4 0.7 -55 to +150 Units V V A W oC Absolute Maximum Ratings TA = 25C unless otherwise noted Parameter MOSFET Drain-Source Voltage MOSFET Gate-Source Voltage Drain Current -Continuous -Pulsed Power dissipation for Single Operation Power dissipation for Single Operation Operating and Storage Junction Temperature Range Thermal Characteristics RJA RJA RJA RJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 86 (Single Operation) 173 (Single Operation) 69 (Dual Operation) 151 (Dual Operation) o C/W Package Marking and Ordering Information Device Marking 027 Device FDMA1027P Reel Size 7" 1 Tape Width 8mm Quantity 3000 units FDMA1027P Rev.D2 (W) (c)2008 Fairchild Semiconductor Corporation FDMA1027P Dual P-Channel PowerTrench(R) MOSFET Electrical Characteristics TA = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, VGS = 0V, ID = -250A ID = -250A, Referenced to 25C VDS = -16V, VGS = 0V VGS = 8V, VDS = 0V -20 -12 -1 100 V mV/C A nA On Characteristics (Note 2) VGS(th) VGS(th) TJ Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient VDS = VGS, ID = -250A ID = -250A, Referenced to 25C VGS = -4.5V, ID = -3.0A VGS = -2.5V, ID = -2.5A RDS(ON) Static Drain-Source On-Resistance VGS = -1.8V, ID = -1.0A VGS = -4.5V, ID = -3.0A TJ = 125C ID(on) gFS On-State Drain Current Forward Transconductance VGS = -4.5V, VDS = -5V VDS = -5V, ID = -3.0A -0.4 -20 -0.7 2 90 120 172 118 7 -1.3 120 160 240 160 A S m V mV/C Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -10V, VGS = 0V, f = 1.0MHz 435 80 45 pF pF pF Switching Characteristics (Note 2) td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = -10V, ID = -3.0A, VGS = -4.5V VDD = -10V, ID = -1A VGS = -4.5V, RGEN = 6 9 11 15 6 4 0.8 0.9 18 19 27 12 6 ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0V, IS = -1.1 A (Note 2) IF= -3.0A, dIF/dt=100A/s -0.8 17 6 -1.1 -1.2 A V ns nC 2 FDMA1027P Rev.D2 (W) FDMA1027P Dual P-Channel PowerTrench(R) MOSFET Electrical Characteristics TA = 25C unless otherwise noted Notes: 1. RJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RJA is determined by the user's board design. (a) RJA = 86C/W when mounted on a 1in2 pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB (b) RJA = 173C/W when mounted on a minimum pad of 2 oz copper a) 86oC/W when mounted on a 1in2 pad of 2 oz copper b) 173oC/W when mounted on a minimum pad of 2 oz copper Scale 1: 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3 FDMA1027P Rev.D2 (W) FDMA1027P Dual P-Channel PowerTrench(R) MOSFET Typical Characteristics 6 VGS = -4.5V -2.5V -2.0V -3.5V -3.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.6 2.2 1.8 1.4 1 0.6 3 VGS = -1.5V 5 -ID, DRAIN CURRENT (A) 4 -1.8V 3 2 -1.5V -1.8V -2.0V -2.5V -3.0V -3.5V -4.5V 1 0 0 0.5 1 1.5 2 -VDS, DRAIN-SOURCE VOLTAGE (V) 2.5 0 1 2 3 4 -ID, DRAIN CURRENT (A) 5 6 Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 1.4 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.3 1.2 1.1 1 0.9 0.8 -50 RDS(ON), ON-RESISTANCE (OHM) ID = -3.0A VGS = -4.5V 0.28 ID = -1.5A 0.22 0.16 TA = 125oC 0.1 TA = 25 C o 0.04 -25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (oC) 125 150 0 2 4 6 8 -VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. On-Resistance Variation with Temperature Figure 4. On-Resistance Variation with Gate-to-Source Voltage 6 VDS = -5V 10 VGS = 0V -IS, REVERSE DRAIN CURRENT (A) 5 -ID, DRAIN CURRENT (A) 1 4 3 2 1 25oC TA = 125oC 0.1 TA = 125oC 0.01 25oC -55oC -55 C o 0.001 0 0 0.5 1 1.5 2 2.5 -VGS, GATE TO SOURCE VOLTAGE (V) 0.0001 0 0.2 0.4 0.6 0.8 1 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature 4 FDMA1027P Rev. D2 (W) FDMA1027P Dual P-Channel PowerTrench(R) MOSFET Typical Characteristics 5 -VGS, GATE-SOURCE VOLTAGE (V) ID = -3.0A 700 600 CAPACITANCE (pF) f = 1MHz VGS = 0 V 4 VDS = -5V -15V 500 400 300 200 100 Crss 3 -10V Ciss 2 1 Coss 0 0 1 2 3 Qg, GATE CHARGE (nC) 4 5 0 0 4 8 12 16 -VDS, DRAIN TO SOURCE VOLTAGE (V) 20 Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics 100 ID, DRAIN CURRENT (A) 10 RDS(ON) LIMIT 10ms 100ms 1s 10s DC VGS = -4.5V SINGLE PULSE RJA = 173oC/W TA = 25oC 1ms 100us 1 0.1 0.01 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 Figure 9. Maximum Safe Operation Area Figure 10. Single Pulse Maximum Power Dissipation Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. Figure 11. Transient Thermal Response Curve 5 FDMA1027P Rev. D2 (W) FDMA1027P Dual P-Channel PowerTrench(R) MOSFET Dimensional Outline and Pad Layout 6 FDMA1027P Rev. D2 (W) FDMA1027P Dual P-Channel PowerTrench(R) MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM * TM (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * FPSTM tm F-PFSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) tm PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM The Power Franchise(R) tm PDP SPMTM Power-SPMTM TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TM TinyPowerTM Saving our world, 1mW /W /kW at a timeTM TinyPWMTM SmartMaxTM TinyWireTM SMART STARTTM SerDesTM SPM(R) STEALTHTM SuperFETTM UHC(R) SuperSOTTM-3 Ultra FRFETTM SuperSOTTM-6 UniFETTM SuperSOTTM-8 VCXTM SupreMOSTM VisualMaxTM SyncFETTM (R) * EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Farichild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Farichild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete Product Status Formative / In Design First Production Full Production Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I36 7 FDMA1027P Rev. D2 (W) |
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